Micro-Photoluminescence Characterization of Low Density Droplet GaAs Quantum Dots for Single Photon Sources

被引：1
|
作者：
Ha, S. -K. [1 ]
Bounouar, S. [2 ]
Song, J. D. [1 ]
Lim, J. Y. [1 ]
Donatini, F. [2 ]
Dang, L. S. [2 ]
Poizat, J. P. [2 ]
Kim, J. S. [3 ]
Choi, W. J. [1 ]
Han, I. K. [1 ]
Lee, J. I. [1 ]
机构：
[1] KIST, Nano Convergence Devices Ctr, Seoul 136791, South Korea
[2] UJF, Team Nanophys & Semicond, Inst Neel, CEA,CNRS, F-38042 Grenoble, France
[3] Yeungnam Univ, Dept Phys, Gyongsan 712749, South Korea
来源：
PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷
关键词：
quantum dot; droplet epitaxy; micro-photoluminescence; single photon source; EMISSION;
D O I：
10.1063/1.3666500
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The GaAs quantum dots in AlGaAs barriers were grown by droplet epitaxy, emitting around 700 nm in wavelength which is compatible with low cost Si based detectors. The excitation power dependent and time resolved micro-photoluminescence measurements identified optical characteristics of exciton and biexciton states which are attributed to good quantum confinements in GaAs QDs.
引用
收藏
页数：2
相关论文
共 50 条
  • [31] Single photon sources with single semiconductor quantum dots
    Shan, Guang-Cun
    Yin, Zhang-Qi
    Shek, Chan Hung
    Huang, Wei
    [J]. FRONTIERS OF PHYSICS, 2014, 9 (02) : 170 - 193
  • [32] Single photon sources with single semiconductor quantum dots
    GuangCun Shan
    ZhangQi Yin
    Chan Hung Shek
    Wei Huang
    [J]. Frontiers of Physics., 2014, 9 (02) - 193
  • [33] Advances in quantum dots for single photon sources
    Arakawa, Yasuhiko
    [J]. IEEE NMDC 2006: IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE 2006, PROCEEDINGS, 2006, : 250 - 250
  • [34] Colloidal quantum dots as single photon sources
    Nelson, Damian
    Byun, Sujeong
    Bullock, James
    Crozier, Kenneth B.
    Kim, Sejeong
    [J]. JOURNAL OF MATERIALS CHEMISTRY C, 2024, 12 (16) : 5684 - 5695
  • [35] GaAs quantum dots grown by droplet etching epitaxy as quantum light sources
    da Silva, Saimon Filipe Covre
    Undeutsch, Gabriel
    Lehner, Barbara
    Manna, Santanu
    Krieger, Tobias M.
    Reindl, Marcus
    Schimpf, Christian
    Trotta, Rinaldo
    Rastelli, Armando
    [J]. APPLIED PHYSICS LETTERS, 2021, 119 (12)
  • [36] Micro-photoluminescence characterization of local electronic states in a (110) GaAs quantum well fabricated by cleaved-edge overgrowth
    Oh, JW
    Yoshita, M
    Hayamizu, Y
    Akiyama, H
    Pfeiffer, LN
    West, KW
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 96 (11) : 6370 - 6374
  • [37] Fabrication of GaAs/AlAs micro-pillar cavities including low-density InAs quantum dots and their photoluminescence properties
    Yamashita, Hiroyuki
    Kawamoto, Noriyuki
    Ogawa, Yoshihide
    Yamaguchi, Koichi
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (06)
  • [38] Temperature-dependent micro-photoluminescence of individual CdSe self-assembled quantum dots
    Kim, JC
    Rho, H
    Smith, LM
    Jackson, HE
    Lee, S
    Dobrowolska, M
    Furdyna, JK
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (02) : 214 - 216
  • [39] Single photon sources based on single InGaAs quantum dots
    Chyi, JI
    Hsieh, TP
    [J]. 2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS), 2005, : 458 - 459
  • [40] Fabrication of InAs quantum dots in AlAs/GaAs DBR pillar microcavities for single photon sources
    Zhang, BY
    Solomon, GS
    Pelton, M
    Plant, J
    Santori, C
    Vuckovic, J
    Yamamoto, Y
    [J]. JOURNAL OF APPLIED PHYSICS, 2005, 97 (07)
12345