Transient Structures and Possible Limits of Data Recording in Phase-Change Materials

被引:42
|
作者
Hu, Jianbo [1 ]
Vanacore, Giovanni M. [1 ]
Yang, Zhe
Miao, Xiangshui
Zewail, Ahmed H. [1 ]
机构
[1] CALTECH, Arthur Amos Noyes Lab Chem Phys, Phys Biol Ctr Ultrafast Sci & Technol, Pasadena, CA 91125 USA
基金
美国国家科学基金会;
关键词
phase-change materials; ultrafast electron diffraction; phase transitions; structural dynamics; germanium telluride; Ge-Sb-Te alloy; ULTRAFAST ELECTRON-DIFFRACTION; LOCAL-STRUCTURE; DYNAMICS; GETE; CRYSTALLOGRAPHY; CRYSTALLINE; TRANSITIONS; BREAKING; SOLIDS;
D O I
10.1021/acsnano.5b01965
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Phase-change materials (PCMs) represent the leading candidates for universal data storage devices, which exploit the large difference in the physical properties of their transitional lattice structures. On a nanoscale, it is fundamental to determine their performance, which is ultimately controlled by the speed limit of transformation among the different structures involved. Here, we report observation with atomic-scale resolution of transient structures of nanofilms of crystalline germanium telluride, a prototypical PCM, using ultrafast electron crystallography. A nonthermal transformation from the initial rhombohedral phase to the cubic structure was found to occur in 12 ps. On a much longer time scale, hundreds of picoseconds, equilibrium heating of the nanofilm is reached, driving the system toward amorphization, provided that high excitation energy is invoked. These results elucidate the elementary steps defining the structural pathway in the transformation of crystalline-to-amorphous phase transitions and describe the essential atomic motions involved when driven by an ultrafast excitation. The establishment of the time scales of the different transient structures, as reported here, permits determination of the possible limit of performance, which is crucial for high-speed recording applications of PCMs.
引用
收藏
页码:6728 / 6737
页数:10
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