Low-frequency noise in AlGaN/GaN high electron mobility transistors irradiated by γ-ray quanta

被引：0

作者：

Vitusevich, SA ^{[1
]}

Klein, N ^{[1
]}

Petrychuk, MV ^{[1
]}

Belyaev, AE ^{[1
]}

Danylyuk, SV ^{[1
]}

Konakova, RV ^{[1
]}

Avksentyev, AY ^{[1
]}

Danilchenko, BA ^{[1
]}

Tilak, V ^{[1
]}

Smart, J ^{[1
]}

Vertiatchikh, A ^{[1
]}

Eastman, LF ^{[1
]}

机构：

[1] Forschungszentrum Julich, Inst Schichten & Grenzfluchen, D-52425 Julich, Germany

来源：

INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS | 2002年

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Room temperature current-voltage and noise measurements have been made before and after gamma irradiation on AlGaN/GaN high electron mobility transistors (HEMTs) grown on sapphire. The saturation current due to radiation-induced defects shows a nonlinear dependence on radiation dose. The deviation of the device parameters does not exceed 20% at highest radiation dose 10(9) Rad and the devices with larger gate lengths demonstrate a higher radiation hardness to the Co-60 gamma rays. The noise spectra of devices after gamma irradiation follow the flicker noise (1/f(gamma)) dependence with the exponent gamma close to one. The Hooge parameter estimated for the HEMTs after gamma irradiation dose does not show a gate-bias dependence and increases by approximately three to five times at radiation dose 2 x 10(8) Rad. The analysis of noise spectra allowed to identify the major sources of noise generation in the investigated HEMT heterostructures.

引用

页码：78 / 81

页数：4

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