Analysis of GaInN light-emitting diodes with rods and lenses fabricated by direct optical wiring technology

被引：2

作者：

Kang, H. ^{[1
]}

Kim, C. C. ^{[2
]}

Cho, J. ^{[1
]}

机构：

[1] Jeonbuk Natl Univ, Sch Semicond & Chem Engn, Jeonju 54896, South Korea

[2] LESSENGERS Inc, Pohang 37673, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2022年 / 81卷 / 10期

基金：

新加坡国家研究基金会;

关键词：

Light-emitting diodes; Emission pattern; Direct optical wiring;

D O I：

10.1007/s40042-022-00618-4

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this study, we present GaInN blue light-emitting diodes (LEDs) with microstructures of rods and lenses made using direct optical wiring (DOW) technology. DOW technology allows the fast and versatile formation of designed patterns on a flat surface of LEDs. These microstructures on the LED surface enable either control of the emission pattern or enhancement of light extraction from the LEDs. DOW LEDs with micro-rods show broad emission patterns with high off-surface-normal intensities. DOW LEDs with micro-lenses show enhanced light output power relative to that of a planar reference LED. Consequently, this approach appears to be highly attractive for various state-of-the-art LED applications.

引用

页码：931 / 934

页数：4

共 50 条

[31] Light-emitting diodes fabricated from biomolecular compounds
Tajima, H.
Shimatani, K.
Komino, T.
Ikeda, S.
Matsuda, M.
Ando, Y.
Akiyama, H.
COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS, 2006, 284 : 61 - 65
[32] Light-emitting and photoconductive diodes fabricated with conjugated polymers
Halls, JJM
Baigent, DR
Cacialli, F
Greenham, NC
Friend, RH
Moratti, SC
Holmes, AB
THIN SOLID FILMS, 1996, 276 (1-2) : 13 - 20
[33] Semipolar GaInN/GaN light-emitting diodes grown on honeycomb patterned substrates
Wunderer, T.
Wang, J.
Lipski, F.
Schwaiger, S.
Chuvilin, A.
Kaiser, U.
Metzner, S.
Bertram, F.
Christen, J.
Shirokov, S. S.
Yunovich, A. E.
Scholz, F.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 2010, 7 (7-8):
[34] Light-emitting diodes with nickel substrates fabricated by electroplating
Chang, PH
Chen, NC
Wang, YN
Shih, CF
Wu, MH
Yang, TH
Tzou, YH
Wang, SJ
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (06): : L22 - L24
[35] Light-emitting diodes fabricated in silicon/iron disilicide
Kewell, AK
Lourenço, MA
Gwilliam, RM
Sharpe, J
McKinty, C
Butler, T
Kirkby, KJR
Homewood, KP
SILICON-BASED OPTOELECTRONICS II, 2000, 3953 : 59 - 67
[36] ZnO light-emitting diodes fabricated on Si substrates with homobuffer layers ZnO light-emitting diodes fabricated on Si substrates with homobuffer layers
Ye, Z. Z.
Lu, J. G.
Zhang, Y. Z.
Zeng, Y. J.
Chen, L. L.
Zhuge, F.
Yuan, G. D.
He, H. P.
Zhu, L. P.
Huang, J. Y.
Zhao, B. H.
APPLIED PHYSICS LETTERS, 2007, 91 (11)
[37] Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes
Dai, Qi
Shan, Qifeng
Wang, Jing
Chhajed, Sameer
Cho, Jaehee
Schubert, E. Fred
Crawford, Mary H.
Koleske, Daniel D.
Kim, Min-Ho
Park, Yongjo
APPLIED PHYSICS LETTERS, 2010, 97 (13)
[38] Reduced nonthermal rollover of wide-well GaInN light-emitting diodes
Maier, Markus
Koehler, Klaus
Kunzer, Michael
Pletschen, Wilfried
Wagner, Joachim
APPLIED PHYSICS LETTERS, 2009, 94 (04)
[39] Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes
Schubert, Martin F.
Chhajed, Sameer
Kim, Jong Kyu
Schubert, E. Fred
Koleske, Daniel D.
Crawford, Mary H.
Lee, Stephen R.
Fischer, Arthur J.
Thaler, Gerald
Banas, Michael A.
APPLIED PHYSICS LETTERS, 2007, 91 (23)
[40] Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si
Ishikawa, H
Zhang, B
Asano, K
Egawa, T
Jimbo, T
JOURNAL OF CRYSTAL GROWTH, 2004, 272 (1-4) : 322 - 326

← 1 2 3 4 5 →