Reliability of anodically bonded silicon-glass packages

被引:23
|
作者
Chen, MX [1 ]
Yi, XJ
Gan, ZY
Liu, S
机构
[1] Huazhong Univ Sci & Technol, Dept Optoelect Engn, Inst Microsyst, Wuhan 430074, Peoples R China
[2] Wayne State Univ, Dept Mech Engn, Detroit, MI 48202 USA
关键词
reliability; anodic bonding; wafer bonding; MEMS;
D O I
10.1016/j.sna.2004.11.031
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
in this paper, reliability of anodically bonded packages between silicon and borosilicate glass wafers has been investigated. The effects of certain accelerated environmental tests such as thermal cycling; thermal shock and boiling test on bonding quality are evaluated. The bonding strength is measured using an in-house tensile tester and fracture mainly occurs inside the glass wafer other than along the interface, indicating the robustness of the bond. The experiments conducted show that fast cooling after bonding results in high thermal stress in glass, which deteriorated the mechanical performances. Thermal cycling and thermal shock can help relax thermal stress, while boiling does do harm to bonding strength owing to their different effect on microstructures. Finally, the fracture interfaces are examined and analyzed by scanning electron microscopy (SEM). (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:291 / 295
页数:5
相关论文
共 50 条
  • [21] Investigation on silicon-glass electrostatic bonding time
    Chuai, RY
    Liu, XW
    Chen, WP
    Song, MH
    Liu, YB
    [J]. SENSORS AND ACTUATORS A-PHYSICAL, 2006, 127 (01) : 194 - 199
  • [22] Current Formulas of Silicon-Glass Anodic Bonding
    Tang, Jialu
    Liu, Xiaowei
    Chuai, Rongyan
    Zhang, Haifeng
    [J]. OPTICAL, ELECTRONIC MATERIALS AND APPLICATIONS, PTS 1-2, 2011, 216 : 278 - +
  • [23] Formation of dendritic nanostructures in Pyrex glass anodically bonded to silicon coated with an aluminum thin film
    Hu, Yu-Qun
    Zhao, Ya-Pu
    Yu, Tongxi
    [J]. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2008, 483-84 : 611 - 616
  • [24] Effect of pressure on the properties of a silicon-glass interface
    Vlasov, SI
    Ergasheva, MA
    Adylov, TP
    [J]. TECHNICAL PHYSICS LETTERS, 2005, 31 (05) : 444 - 445
  • [25] Effect of pressure on the properties of a silicon-glass interface
    S. I. Vlasov
    M. A. Ergasheva
    T. P. Adylov
    [J]. Technical Physics Letters, 2005, 31 : 444 - 445
  • [26] Sealing of silicon-glass microcavities with polymer filling
    Knapkiewicz, P.
    Augustyniak, I.
    [J]. BULLETIN OF THE POLISH ACADEMY OF SCIENCES-TECHNICAL SCIENCES, 2016, 64 (02) : 283 - 286
  • [27] A method to evade silicon backside damage in deep reactive ion etching for anodically bonded glass-silicon structures
    Matsuura, T
    Chabloz, M
    Jiao, J
    Yoshida, Y
    Tsutsumi, K
    [J]. SENSORS AND ACTUATORS A-PHYSICAL, 2001, 89 (1-2) : 71 - 75
  • [28] Silicon-glass wafer bonding with silicon hydrophilic fusion bonding technology
    Xiao, ZX
    Wu, GY
    Li, ZH
    Zhang, CB
    Hao, YL
    Wang, YY
    [J]. SENSORS AND ACTUATORS A-PHYSICAL, 1999, 72 (01) : 46 - 48
  • [29] Investigation on Silicon-glass Electrostatic Bonding Time Experiment
    Liu Xiaowei
    Tang Jialu
    Chuai Rongyan
    Zhang Haifeng
    Wang Xilian
    [J]. MEMS/NEMS NANO TECHNOLOGY, 2011, 483 : 78 - 82
  • [30] IMAGING OF CHEMILUMINESCENT REACTIONS IN MESOSCALE SILICON-GLASS MICROSTRUCTURES
    KRICKA, LJ
    JI, XY
    NOZAKI, O
    WILDING, P
    [J]. JOURNAL OF BIOLUMINESCENCE AND CHEMILUMINESCENCE, 1994, 9 (03): : 135 - 138