205-GHz (Al,In)N/GaN HEMTs (vol 31, pg 957, 2010)

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作者：

Sun, Haifeng

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来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 11期

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D O I：

10.1109/LED.2010.2087710

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

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页码：1320 / 1320

页数：1

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