205-GHz (Al,In)N/GaN HEMTs (vol 31, pg 957, 2010)

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作者：
Sun, Haifeng
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来源：
IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 11期
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D O I：
10.1109/LED.2010.2087710
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：1320 / 1320
页数：1
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