Structural and optical properties of heterostructures with InAs quantum dots in an InGaAsN quantum well grown by molecular-beam epitaxy

被引：6

作者：

Soshnikov, IP ^{[1
]}

Kryzhanovskaya, NV

Ledentsov, NN

Egorov, AY

Mamutin, VV

Odnoblyudov, VA

Ustinov, VM

Gorbenko, OM

Kirmse, H

Neumann, W

Bimberg, D

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Russian Acad Sci, Inst Analyt Instrumentat, St Petersburg 198103, Russia

[3] Humboldt Univ, D-12489 Berlin, Germany

[4] Tech Univ Berlin, D-10623 Berlin, Germany

来源：

SEMICONDUCTORS | 2004年 / 38卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1682340

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Results obtained in a study of the structural and optical properties of GaAs-based heterostructures with InAs quantum dot layers overgrown with InGaAsN quantum wells are presented. Transmission electron microscopy has been applied to analyze how the thickness of the InGaAsN layer and the content and distribution of nitrogen in this layer affect the size of nanoinclusions and the nature and density of structural defects. It is shown that the size of InAs nanodomains and the magnitude of the lattice mismatch in structures containing nitrogen exceed those in nitrogen-free structures. A correlation between the luminescence wavelength and the size and composition of nanodomains is demonstrated. Furthermore, a correlation between the emission intensity and defect density in the structure is revealed. (C) 2004 MAIK "Nauka / Interperiodica".

引用

页码：340 / 343

页数：4

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