Surface Activated Bonding of LiNbO3 and GaN at Room Temperature

被引：5

作者：

Takigawa, R. ^{[1
]}

Higurashi, E. ^{[2
,3
]}

Asano, T. ^{[1
]}

机构：

[1] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Fukuoka 8190395, Japan

[2] Natl Inst Adv Ind Sci & Technol, Res Ctr Ubiquitous MEMS & Micro Engn, Tsukuba, Ibaraki 3058564, Japan

[3] Univ Tokyo, Sch Engn, Dept Precis Engn, Bunkyo Ku, Tokyo 1538904, Japan

来源：

SEMICONDUCTOR WAFER BONDING: SCIENCE, TECHNOLOGY, AND APPLICATIONS 15 | 2018年 / 86卷 / 05期

关键词：

LITHIUM-NIOBATE; SILICON-WAFERS; SI;

D O I：

10.1149/08605.0207ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this study, we report room-temperature wafer bonding of a GaN and a LiNbO3 (LN) using a surface activated bonding (SAB) method. The modified SAB using Fe-containing Ar ion beam bombardment demonstrated the stronger bond strength of a GaN and a LN than the standard SAB using Ar fast atom beam bombardment. As the result of a dicing test, the bonded wafer using modified SAB method was successfully cut into 1 x 1 mm(2) dies without interfacial debonding owing to the applied stress during dicing. This result shows a strong bond strength which may be sufficient for device applications. It was found that Fe nanolayer deposited during ion beam bombardment appears to work well as an adhesive and form a strong bond between a negative surface of LN and a Ga-face of GaN.

引用

页码：207 / 213

页数：7

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