DUV-assisted E-beam Resist Process

被引：0
|
作者：
Chen, Wei-Su [1 ,2 ]
Li, Yen-Cheng [3 ]
Tsai, Ming-Jinn [1 ,2 ]
机构：
[1] Ind Technol Res Inst, Elect & Optoelect Res Lab, Hsinchu, Taiwan
[2] NanoTechnol Res Ctr, Ind Technol Res Inst, Hsinchu, Taiwan
[3] Everlight Chem Ind Corp, Taipei, Taiwan
来源：
ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXVI | 2009年 / 7273卷
关键词：
Contact Hole; E-beam lithography; DUV-assisted exposure; Sidewall profile; ESCAP; LITHOGRAPHY;
D O I：
10.1117/12.813626
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electron beam direct writing (EBDW) resist process is slow in throughput but has the highest linewidth resolution among all the lithography techniques. However the e-beam energy is high enough to cut off the polymer chain of DUV chemically amplified resist (CAR) and thus in this paper, DUV-assisted e-beam resist process is studied to increase throughput. The C/H critical dimension (CD) with e-beam exposure only increases for larger dose. E-beam dose-to-size of C/H is found to be independent on pattern density. The smallest CD resolved is 30.2 nm for 30 nm designed CD. DUV pre-exposed resist resolves the same C/H CD size with lower e-beam dose. Largest e-beam dose reduction with DUV-assistance is similar to 40% for 50 and 70 nm designed CD of C/Hs. BARC coating and multiple DUV pre-exposures with variable depths are studied for obtaining a vertical profile like that exposed by e-beam only.
引用
收藏
页数：10
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