In Situ Demonstration of the Link Between Mechanical Strength and Resistive Switching in Resistive Random-Access Memories

被引：12
|
作者：
Shi, Yuanyuan [1 ]
Ji, Yanfeng [1 ]
Hui, Fei [1 ]
Nafria, Montserrat [2 ]
Porti, Marc [2 ]
Bersuker, Gennadi [3 ]
Lanza, Mario [1 ]
机构：
[1] Soochow Univ, Inst Funct Nano & Soft Mat, Suzhou 215123, Peoples R China
[2] Univ Autonoma Barcelona, Dept Elect Engn, Cerdanyola Del Valles 08193, Spain
[3] SEMATECH, Albany, NY 78741 USA
来源：
ADVANCED ELECTRONIC MATERIALS | 2015年 / 1卷 / 04期
基金：
美国国家科学基金会;
关键词：
conductive atomic force microscope; conductive filament; grain boundaries; mechanical stress; resistive switching;
D O I：
10.1002/aelm.201400058
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The link between resistive switching and mechanical strength is probed in situ by using a combination of nanoscale electronic and mechanical tests. In HfO2-based non-volatile memories, reversible conductive filaments only form at mechanically weak sites. Defective bonding allows easy defect formation and less dramatic forming process, which is essential to allow conductive filament disruption.
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页数：5
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