In Situ Demonstration of the Link Between Mechanical Strength and Resistive Switching in Resistive Random-Access Memories

被引：12

作者：

Shi, Yuanyuan ^{[1
]}

Ji, Yanfeng ^{[1
]}

Hui, Fei ^{[1
]}

Nafria, Montserrat ^{[2
]}

Porti, Marc ^{[2
]}

Bersuker, Gennadi ^{[3
]}

Lanza, Mario ^{[1
]}

机构：

[1] Soochow Univ, Inst Funct Nano & Soft Mat, Suzhou 215123, Peoples R China

[2] Univ Autonoma Barcelona, Dept Elect Engn, Cerdanyola Del Valles 08193, Spain

[3] SEMATECH, Albany, NY 78741 USA

来源：

ADVANCED ELECTRONIC MATERIALS | 2015年 / 1卷 / 04期

基金：

美国国家科学基金会;

关键词：

conductive atomic force microscope; conductive filament; grain boundaries; mechanical stress; resistive switching;

D O I：

10.1002/aelm.201400058

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The link between resistive switching and mechanical strength is probed in situ by using a combination of nanoscale electronic and mechanical tests. In HfO2-based non-volatile memories, reversible conductive filaments only form at mechanically weak sites. Defective bonding allows easy defect formation and less dramatic forming process, which is essential to allow conductive filament disruption.

引用

页数：5

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