Spin relaxation in n-type GaAs quantum wells with transient spin grating

被引:21
|
作者
Weng, M. Q. [1 ,2 ]
Wu, M. W. [1 ,2 ]
Cui, H. L. [3 ]
机构
[1] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China
[2] Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China
[3] Stevens Inst Technol, Dept Phys & Engn Phys, Hoboken, NJ 07030 USA
基金
中国国家自然科学基金;
关键词
D O I
10.1063/1.2899962
中图分类号
O59 [应用物理学];
学科分类号
摘要
By solving the kinetic spin Bloch equations, we study the time evolution of the transient spin grating, whose spin polarization periodically varies in real space, confined in (001) GaAs quantum wells. With this study, we can investigate the properties of both the spin transport and the spin relaxation at the same time. The Fourier component of the spin signal double exponentially decays with two decay rates 1/tau(+) and 1/tau(-). In the high temperature regime, the average of these two rates quadratically varies with the grating wave vector q, i.e., (1/tau(+) + 1/tau(-))/2 = D(s)q(2) + 1/(tau) over tilde (s), with D-s and (tau) over tilde (s) representing the spin diffusion coefficient and the average of the out-of-plane and the in-plane spin relaxation times, respectively. tau(+/-) calculated from our theory are in good agreement with the experimental data by Weber et al. [Phys. Rev. Lett. 98, 076604 (2007)]. By comparing D-s with and without the electron-electron Coulomb scattering, we calculate the contribution of Coulomb drag to the spin diffusion coefficient. With the transient spin grating result, we further reveal the relations among different characteristic parameters such as spin diffusion coefficient D-s, spin relaxation time tau(s), and spin injection length L-s. We show that in the presence of the Dresselhaus and/or Rashba spin-orbit coupling, the widely used relation L-s = root D-s tau(s) is generally inaccurate and can even be very wrong in some special cases. We present an accurate way to extract the steady-state transport characteristic parameters from the transient spin grating signals. (C) 2008 American Institute of Physics.
引用
收藏
页数:8
相关论文
共 50 条
  • [42] Study of electron spin relaxation time in GaAs (110) quantum wells
    Liu, Linsheng
    Liu, Su
    Wang, Wenxin
    Zhao, Hongming
    Liu, Baoli
    Gao, Hanchao
    Jiang, Zhongwei
    Wang, Jia
    Huang, Qing'an
    Chen, Hong
    Zhou, Junming
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2007, 28 (06): : 856 - 859
  • [43] Monte Carlo study of spin relaxation in AlGaAs/GaAs quantum wells
    Bournel, A
    Dollfus, P
    Cassan, E
    Hesto, P
    APPLIED PHYSICS LETTERS, 2000, 77 (15) : 2346 - 2348
  • [44] Spin relaxation in GaAs/AlxGa1-xAs quantum wells
    Malinowski, A
    Britton, RS
    Grevatt, T
    Harley, RT
    Ritchie, DA
    Simmons, MY
    PHYSICAL REVIEW B, 2000, 62 (19) : 13034 - 13039
  • [45] Electrical Suppression of Spin Relaxation in GaAs(111)B Quantum Wells
    Hernandez-Minguez, A.
    Biermann, K.
    Hey, R.
    Santos, P. V.
    PHYSICAL REVIEW LETTERS, 2012, 109 (26)
  • [46] SPIN RELAXATION OF EXCITONS IN STRAINED INGAAS/GAAS QUANTUM-WELLS
    DAREYS, B
    AMAND, T
    MARIE, X
    BAYLAC, B
    BARRAU, J
    BROUSSEAU, M
    RAZDOBREEV, I
    DUNSTAN, DJ
    JOURNAL DE PHYSIQUE IV, 1993, 3 (C5): : 351 - 354
  • [47] Full Electrical Control of the Electron Spin Relaxation in GaAs Quantum Wells
    Balocchi, A.
    Duong, Q. H.
    Renucci, P.
    Liu, B. L.
    Fontaine, C.
    Amand, T.
    Lagarde, D.
    Marie, X.
    PHYSICAL REVIEW LETTERS, 2011, 107 (13)
  • [48] Room temperature spin relaxation in GaAs/AlGaAs multiple quantum wells
    Britton, RS
    Grevatt, T
    Malinowski, A
    Harley, RT
    Perozzo, P
    Cameron, AR
    Miller, A
    APPLIED PHYSICS LETTERS, 1998, 73 (15) : 2140 - 2142
  • [49] Influence of interface interruption on spin relaxation in GaAs (110) quantum wells
    Liu, L. S.
    Wang, W. X.
    Li, Z. H.
    Liu, B. L.
    Zhao, H. M.
    Wang, J.
    Gao, H. C.
    Jiang, Z. W.
    Liu, S.
    Chen, H.
    Zhou, J. M.
    JOURNAL OF CRYSTAL GROWTH, 2007, 301 : 93 - 96
  • [50] Carrier mobility dependence of electron spin relaxation in GaAs quantum wells
    Terauchi, R
    Ohno, Y
    Adachi, T
    Sato, A
    Matsukura, F
    Tackeuchi, A
    Ohno, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4B): : 2549 - 2551