Study of electron spin relaxation time in GaAs (110) quantum wells

被引：0
|
作者：
Liu, Linsheng [1 ,2 ,3 ]
Liu, Su [1 ]
Wang, Wenxin [2 ]
Zhao, Hongming [2 ]
Liu, Baoli [2 ]
Gao, Hanchao [2 ]
Jiang, Zhongwei [2 ]
Wang, Jia [2 ]
Huang, Qing'an [1 ,3 ]
Chen, Hong [2 ]
Zhou, Junming [2 ]
机构：
[1] School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
[2] Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Acad. of Sci., Beijing 100080, China
[3] Key Laboratory of MEMS, Southeast University, Nanjing 210096, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2007年 / 28卷 / 06期
关键词：
Molecular beam epitaxy - Optical properties - Photoluminescence - Relaxation time - Semiconducting gallium arsenide;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
GaAs/AlGaAs (110) multiple quantum wells (MQWs) were grown by solid source molecular beam epitaxy (MBE) with a valved arsenic cracker cell. The optical properties of the undoped GaAs (110) MQWs were studied by low-temperature photoluminescence and time-resolved photoluminescence (TRPL), which show that a strong electron spin relaxation dynamic is dependent on the excitation power and wavelength at room temperature. In this material, the predominant spin scattering mechanism [D'yakonov-Perel' (DP) mechanism] for conventional (100) QWs is substantially suppressed. The experiment data indicate that the electron-hole exchange interaction has a great impact on the spin relaxation time in GaAs (110) MQWs at room temperature.
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页码：856 / 859
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