Size-Dependent Lattice Thermal Conductivity of Nanostructured Bulk Semiconductors

被引:5
|
作者
Yang, C. C. [1 ]
Li, S. [1 ]
机构
[1] Univ New S Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
基金
澳大利亚研究理事会;
关键词
Thermoelectricity; thermal conductivity; nanothermodynamics; nanocomposites; PHONON-BOUNDARY SCATTERING; THERMOELECTRIC-MATERIALS; SILICON NANOWIRES; LAYERS;
D O I
10.1007/s11664-010-1467-y
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Recently, nanostructuring of bulk semiconductors has emerged as an effective approach to develop high-efficiency thermoelectric materials for large-scale device applications, where the thermal conductivity reduction predominates in the enhanced figure of merit of these materials. In this work, a quantitative nanothermodynamic model was established to calculate the lattice thermal conductivity of semiconductor nanocomposites considering the interface scattering effects. It is found that the lattice thermal conductivity can be significantly reduced in nanostructured bulk semiconductors compared with their bulk counterparts. The findings in this work may provide new insights into the fundamental understanding of phonon transport in nanocomposites and also the development of high-performance thermoelectric materials.
引用
收藏
页码:953 / 956
页数:4
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