Size-dependent melting temperature and thermal conductivity of nanoscale semiconductors

被引:2
|
作者
Liang, L. H. [1 ]
Li, Baowen [1 ]
机构
[1] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore
来源
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2007年 / 21卷 / 23-24期
关键词
nanosemiconductors; thermal conductivity; melting temperature; size effect;
D O I
10.1142/S0217979207045141
中图分类号
O59 [应用物理学];
学科分类号
摘要
A model describing size-dependent melting temperature and thermal conductivity of nanosemiconductors is proposed based on Lindermann's melting criterion and Debye model. By the atomic thermal vibration consideration and by introducing intrinsic size effect of phonon velocity and mean free path combined with surface scattering effect, the model predicts that the melting temperature and thermal conductivity of nanosemiconductors decrease as the size reduces. The size effect depends on such material parameters as the vibration entropy, mean free path, the characteristic crystal size and surface roughness. The predictions are in agreement with experimental results of Si nanoparticles, nanowires and thin films.
引用
收藏
页码:4026 / 4029
页数:4
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