Simulation study of reduced self-heating in novel thin-SOI vertical bipolar transistors

被引：0
|
作者：
Ouyang, QQ [1 ]
Xiu, K [1 ]
机构：
[1] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
来源：
SISPAD: 2005 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2005年
关键词：
D O I：
10.1109/SISPAD.2005.201471
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Simulations have been performed to study the self-heating in thin-SOI, vertical bipolar transistors for the first time. Two new device structures are proposed and the simulations show that they can improve the heat dissipation significantly. By adding a beat sink connecting the collector and the substrate and/or having a thin localized BOX underneath the SOI collector, self-heating can be reduced substantially without increasing device area or degrading device performance.
引用
收藏
页码：55 / 58
页数：4
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