Design and simulations of SOICMOS micro-hotplate gas sensors

被引:88
|
作者
Udrea, F
Gardner, JW
Setiadi, D
Covington, JA
Dogaru, T
Lua, CC
Milne, WI
机构
[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
[2] Univ Warwick, Sch Engn, Div Elect & Elect Engn, Coventry CV4 7AL, W Midlands, England
基金
英国工程与自然科学研究理事会;
关键词
design; simulations; SOICMOS;
D O I
10.1016/S0925-4005(01)00810-3
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
This paper describes a new generation of integrated solid-state gas-sensors embedded in SOI micro-hotplates. The micro-hotplates lie on a SOI membrane and consist of MOSFET heaters that elevate the operating temperature, through self-heating, of a gas sensitive material. These sensors are fully compatible with Sol CMOS or BiCMOS technologies, offer ultra-low power consumption (under 100 mW), high sensitivity, low noise, low unit cost, reproducibility and reliability through the use of on-chip integration. In addition, the new integrated sensors offer a nearly uniform temperature distribution over the active area at its operating temperatures at up to about 300-350 degreesC. This makes SOI-based aas-sensing devices particularly attractive for use in handheld battery-operated gas monitors. This paper reports on the design of a chemo-resistive gas sensor and proposes for the first time an intelligent Sol membrane microcalorimeter using active micro-FET heaters and temperature sensors. A comprehensive set of numerical and analogue simulations is also presented including complex 2D and 3D electro-thermal numerical analyses. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:180 / 190
页数:11
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