Recent Advances in GaN Power Electronics

被引：0
|
作者：
Boutros, Karim [1 ]
Chu, Rongming [1 ]
Hughes, Brian [1 ]
机构：
[1] HRL Labs LLC, Malibu, CA 90265 USA
来源：
2013 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC) | 2013年
关键词：
Gallium Nitride; GaN; GaN-on-Si; heterostructure field-effect-transistor; HFET; power switch; energy-efficient electronics; power electronics;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Gallium Nitride power devices are poised to replace silicon-based MOSFETs in power switching applications having weight and volume constraints, while simultaneously needing a high overall efficiency. With its projected 100x performance advantage over silicon, GaN is a game changing technology for energy-efficient power electronics. This paper reviews the advantages of GaN material and devices, the performance of these devices in power circuits, and the potential applications for this technology.
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页数：4
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