Recent Advances in GaN Power Electronics

被引：0

作者：

Boutros, Karim ^{[1
]}

Chu, Rongming ^{[1
]}

Hughes, Brian ^{[1
]}

机构：

[1] HRL Labs LLC, Malibu, CA 90265 USA

来源：

2013 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC) | 2013年

关键词：

Gallium Nitride; GaN; GaN-on-Si; heterostructure field-effect-transistor; HFET; power switch; energy-efficient electronics; power electronics;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gallium Nitride power devices are poised to replace silicon-based MOSFETs in power switching applications having weight and volume constraints, while simultaneously needing a high overall efficiency. With its projected 100x performance advantage over silicon, GaN is a game changing technology for energy-efficient power electronics. This paper reviews the advantages of GaN material and devices, the performance of these devices in power circuits, and the potential applications for this technology.

引用

页数：4

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