Recent Advances in GaN Power Switching Devices

被引：0

作者：

Tamura, Satoshi ^{[1
]}

Anda, Yoshiharu ^{[1
]}

Ishida, Masahiro ^{[1
]}

Uemoto, Yasuhiro ^{[2
]}

Ueda, Tetsuzo ^{[1
]}

Tanaka, Tsuyoshi ^{[1
]}

Ueda, Daisuke ^{[3
]}

机构：

[1] Panasonic Corp, Semicond Co, Semicond Device Res Ctr, 1 Kotari Yakemachi, Nagaokakyo, Kyoto 6178520, Japan

[2] Panasonic Corp, Semicond Co, Discrete Device Dev Ctr, Kyoto 6178520, Japan

[3] Panasonic Corp, Adv Technol Res Labs, Kyoto 6190237, Japan

来源：

2010 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS) | 2010年

关键词：

GaN; power switching transistor; Gate Injection Transistor; Inverter IC;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recent advances in GaN power switching devices are reviewed. A new normall-off GaN transistor called Gate Injection Transistor (GIT) increases drain current by conductivity modulation. The GIT is fabricated on cost-effective Si substrates by novel MOCVD technology enabling crack-free and smooth surfaces over 6-inch wafer. These technologies with thermally stable device isolation by Fe ion implantation are applied for a monolithic inverter IC. This is the world fist demonstration of a GaN inverter IC for motor drive, which reduces the total operating loss by 42% from that by the IGBT-based inverter. These technologies are indispensable for wide-spread use of GaN power switching transistors in the future.

引用

页数：4

共 50 条

[1] Recent Advances in Wide Bandgap Power Switching Devices
Sheng, Kuang
Guo, Qing
[J]. GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 2, 2012, 50 (03): : 179 - 188
[2] Recent advances on dielectrics technology for SiC and GaN power devices
Roccaforte, F.
Fiorenza, P.
Greco, G.
Vivona, M.
Lo Nigro, R.
Giannazzo, F.
Patti, A.
Saggio, M.
[J]. APPLIED SURFACE SCIENCE, 2014, 301 : 9 - 18
[3] Recent Advances in GaN-Based Power HEMT Devices
He, Jiaqi
Cheng, Wei-Chih
Wang, Qing
Cheng, Kai
Yu, Hongyu
Chai, Yang
[J]. ADVANCED ELECTRONIC MATERIALS, 2021, 7 (04)
[4] Recent Advances and Future Prospects on GaN-based Power Devices
Ueda, Tetsuzo
[J]. 2014 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-HIROSHIMA 2014 - ECCE-ASIA), 2014, : 2075 - 2078
[5] Recent Advances in GaN Power Electronics
Boutros, Karim
Chu, Rongming
Hughes, Brian
[J]. 2013 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC), 2013,
[6] Recent Advances in Power Encoding and GaN Switching Technologies for Digital Transmitters (Invited Paper)
Ma, Rui
[J]. 2015 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), VOLS 1-3, 2015,
[7] GaN on Si Technologies for Power Switching Devices
Ishida, Masahiro
Ueda, Tetsuzo
Tanaka, Tsuyoshi
Ueda, Daisuke
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (10) : 3053 - 3059
[8] Recent advances in power semiconductor devices
Mawby, PA
Bassett, RJ
[J]. IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 2001, 148 (02): : 53 - 54
[9] Recent advances in SiC power devices
Cooper, JA
Melloch, MR
Woodall, JM
Spitz, J
Schoen, KJ
Henning, JP
[J]. SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 895 - 900
[10] Recent development of vertical GaN power devices
Oka, Tohru
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (SB)

← 1 2 3 4 5 →