Mechanism of Breakdown Enhancement in AlGaN/GaN HEMTs Using a High-k Passivation Layer

被引：0

作者：

Zhao, ShengLei ^{[1
]}

Fu, XiaoJun ^{[1
]}

Liu, Fan ^{[1
]}

Liu, LunCai ^{[1
]}

Luo, Jun ^{[1
]}

Hu, GangYi ^{[1
]}

Ma, XiaoHua ^{[2
]}

Zhang, JinCheng ^{[2
]}

Hao, Yue ^{[2
]}

机构：

[1] CETC, Sichuan Inst Solid State Circuits, Dept Analog Integrated Circuit Design, Chongqing, Peoples R China

[2] Xidian Univ, Sch Microelect, Xian, Peoples R China

来源：

7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016 | 2016年

关键词：

breakdown voltage; depletion capacitance model; GaN-based high-electron mobility transistors (HEMTs); high-k passivation layer;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we have investigated the mechanism of breakdown enhancement in AlGaN/GaN HEMTs using a high-k passivation layer. A group of depletion capacitance models are proposed to investigate the breakdown enhancement of the high-k passivation layer. With a passivation layer, the drain-side wall and top of the gate metal would form metal-insulator-semiconductor contacts with GaN-based heterojunction, which is the reason for the modulation of the high-k passivation layer on electric field.

引用

页数：2

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