Radiation tolerance of a 0.18 μm CMOS process

被引：0

作者：

Manghisoni, M ^{[1
]}

Ratti, L ^{[1
]}

Re, V ^{[1
]}

Speziali, V ^{[1
]}

机构：

[1] Univ Pavia, I-27100 Pavia, Italy

来源：

ADVANCED TECHNOLOGY AND PARTICLE PHYSICS, PROCEEDINGS | 2002年 / 1卷

关键词：

D O I：

10.1142/9789812776464_0111

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The effects of ionizing radiation on P and N-channel devices belonging to a CMOS process with a minimum channel feature of 0.18 mu m have been investigated. The aim is to assess the radiation hardness of recent submicron CMOS technologies in view of applications to high granularity detectors and imaging systems. Static, signal and noise parameters were monitored throughout irradiation steps up to a 100 kGy absorbed dose of Co-60 gamma-rays, and compared to the results of the radiation hardness characterization of a 0.35 mu m BiCMOS process.

引用

页码：787 / 791

页数：5

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