Micro-photoluminescence mapping of surface plasmon enhanced light emissions from InGaN/GaN quantum wells

被引：12

作者：

Tateishi, Kazutaka ^{[1
]}

Wang, Pangpang ^{[1
]}

Ryuzaki, Sou ^{[1
]}

Funato, Mitsuru ^{[2
]}

Kawakami, Yoichi ^{[2
]}

Okamoto, Koichi ^{[1
]}

Tamada, Kaoru ^{[1
]}

机构：

[1] Kyushu Univ, Inst Mat Chem & Engn, Nishi Ku, 744 Motooka, Fukuoka 8190395, Japan

[2] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Katsura Campus, Kyoto 6158510, Japan

来源：

APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 17期

基金：

日本科学技术振兴机构;

关键词：

DYNAMICS; EFFICIENCY; EMITTERS;

D O I：

10.1063/1.4998798

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We conducted photoluminescence (PL) mapping to elucidate the detailed mechanism of PL enhancement based on the energy transfer from excitons to surface plasmon polaritons (SPPs) in silver-coated InGaN quantum wells (QWs). The PL mapping for bare InGaN QWs showed positive or negative correlations between the PL peak intensity and wavelength. These correlations are normally caused by exciton localization and the quantum confined Stark effect, respectively; however, they did not appear in the silver-coated region of the InGaN QWs, and the wavelength distribution shifted into shorter wavelengths due to the SP-induced PL enhancement. These results suggest that the energy transfer from the excitons to the SPPs should be much faster than that in the exciton localization and charge screening processes of the piezoelectric field in QWs. Published by AIP Publishing.

引用

页数：5

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