Phase-Change and Redox-Based Resistive Switching Memories

被引：132
|
作者：
Wouters, Dirk J. [1 ,2 ]
Waser, Rainer [1 ,2 ,3 ]
Wuttig, Matthias [2 ,4 ]
机构：
[1] Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech 2, D-52074 Aachen, Germany
[2] Julich Aachen Res Alliance, Fundamentals Future Informat Technol Sect JARA, D-52425 Julich, Germany
[3] Forschungszentrum Julich, Peter Grunberg Inst PGI 7, D-52428 Julich, Germany
[4] Rhein Westfal TH Aachen, Phys Inst 1A 1, D-52074 Aachen, Germany
来源：
PROCEEDINGS OF THE IEEE | 2015年 / 103卷 / 08期
关键词：
Electronic memories; phase-change memories (PCMs); resistive random access memory (ReRAM); resistive switching (RS) memories; RESISTANCE; MECHANISMS; KINETICS; FIELD; DRIFT;
D O I：
10.1109/JPROC.2015.2433311
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper addresses the two main resistive switching (RS) memory technologies: phase-change memory (PCM) and redox-based resistive random access memory (ReRAM). It will review the basic concepts, the initial promises, and current state of the art, with focus on possible scaling pathways for low-power operation and dense, true 3-D memory. Recent physical insights and new potential concepts will be discussed.
引用
收藏
页码：1274 / 1288
页数：15
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