Resistive switching characteristics of interfacial phase-change memory at elevated temperature

被引：6

作者：

Mitrofanov, Kirill V. ^{[1
]}

Saito, Yuta ^{[1
]}

Miyata, Noriyuki ^{[1
]}

Fons, Paul ^{[1
]}

Kolobov, Alexander V. ^{[1
]}

Tominaga, Junji ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Systemat Mat Design Grp, Tsukuba, Ibaraki 3058565, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2018年 / 57卷 / 04期

关键词：

ELECTRON-DIFFRACTION; GE2SB2TE5;

D O I：

10.7567/JJAP.57.04FE06

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Interfacial phase-change memory (iPCM) devices were fabricated using W and TiN for the bottom and top contacts, respectively, and the effect of operation temperature on the resistive switching was examined over the range between room temperature and 200 degrees C. It was found that the high-resistance (RESET) state in an iPCM device drops sharply at around 150 degrees C to a low-resistance (SET) state, which differs by similar to 400 Omega from the SET state obtained by electric-field-induced switching. The iPCM device SET state resistance recovered during the cooling process and remained at nearly the same value for the RESET state. These resistance characteristics greatly differ from those of the conventional Ge-Sb-Te (GST) alloy phase-change memory device, underscoring the fundamentally different switching nature of iPCM devices. From the thermal stability measurements of iPCM devices, their optimal temperature operation was concluded to be less than 100 degrees C. (c) 2018 The Japan Society of Applied Physics.

引用

页数：4

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