Phase-Change and Redox-Based Resistive Switching Memories

被引：132
|
作者：
Wouters, Dirk J. [1 ,2 ]
Waser, Rainer [1 ,2 ,3 ]
Wuttig, Matthias [2 ,4 ]
机构：
[1] Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech 2, D-52074 Aachen, Germany
[2] Julich Aachen Res Alliance, Fundamentals Future Informat Technol Sect JARA, D-52425 Julich, Germany
[3] Forschungszentrum Julich, Peter Grunberg Inst PGI 7, D-52428 Julich, Germany
[4] Rhein Westfal TH Aachen, Phys Inst 1A 1, D-52074 Aachen, Germany
来源：
PROCEEDINGS OF THE IEEE | 2015年 / 103卷 / 08期
关键词：
Electronic memories; phase-change memories (PCMs); resistive random access memory (ReRAM); resistive switching (RS) memories; RESISTANCE; MECHANISMS; KINETICS; FIELD; DRIFT;
D O I：
10.1109/JPROC.2015.2433311
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper addresses the two main resistive switching (RS) memory technologies: phase-change memory (PCM) and redox-based resistive random access memory (ReRAM). It will review the basic concepts, the initial promises, and current state of the art, with focus on possible scaling pathways for low-power operation and dense, true 3-D memory. Recent physical insights and new potential concepts will be discussed.
引用
收藏
页码：1274 / 1288
页数：15
相关论文
共 50 条
  • [1] Redox-Based Resistive Switching Memories
    Waser, Rainer
    [J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2012, 12 (10) : 7628 - 7640
  • [2] Design of Materials Configuration for Optimizing Redox-Based Resistive Switching Memories
    Chen, Shaochuan
    Valov, Ilia
    [J]. ADVANCED MATERIALS, 2022, 34 (03)
  • [3] Interfacial interactions and their impact on redox-based resistive switching memories (ReRAMs)
    Valov, Ilia
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2017, 32 (09)
  • [4] Atomic Scale and Interface Interactions in Redox-Based Resistive Switching Memories
    Valov, I.
    Tappertzhofen, S.
    Linn, E.
    Menzel, S.
    van den Hurk, J.
    Waser, R.
    [J]. NONVOLATILE MEMORIES 3, 2014, 64 (14): : 1 - 16
  • [5] Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
    Waser, Rainer
    Dittmann, Regina
    Staikov, Georgi
    Szot, Kristof
    [J]. ADVANCED MATERIALS, 2009, 21 (25-26) : 2632 - +
  • [6] Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale
    Valov, Ilia
    [J]. CHEMELECTROCHEM, 2014, 1 (01): : 26 - 36
  • [7] Recent Progress in Redox-Based Resistive Switching
    Waser, Rainer
    Menzel, Stephan
    Rana, Vikas
    [J]. 2012 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS 2012), 2012, : 1596 - 1599
  • [8] Studying the switching variability in redox-based resistive switching devices
    Elhameh Abbaspour
    Stephan Menzel
    Christoph Jungemann
    [J]. Journal of Computational Electronics, 2020, 19 : 1426 - 1432
  • [9] Studying the switching variability in redox-based resistive switching devices
    Abbaspour, Elhameh
    Menzel, Stephan
    Jungemann, Christoph
    [J]. JOURNAL OF COMPUTATIONAL ELECTRONICS, 2020, 19 (04) : 1426 - 1432
  • [10] Redox-based resistive switching in ferroelectric perovskite nanotubes
    Nonnenmann, Stephen S.
    Gallo, Eric M.
    Spanier, Jonathan E.
    [J]. APPLIED PHYSICS LETTERS, 2010, 97 (10)
12345