Textured aluminium-doped ZnO thin films prepared by magnetron sputtering

被引：19
|
作者：
Bose, S
Ray, S
Barua, AK
机构：
[1] Energy Research Unit, Indian Assoc. the Cultiv. of Sci., Jadavpur
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1996年 / 29卷 / 07期
关键词：
D O I：
10.1088/0022-3727/29/7/022
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electrical properties of RF magnetron-sputtered aluminium-doped zinc oxide (AZO) films are studied. It is seen that the properties are closely related to their structural properties and doping incorporation. The highly conductive milky AZO films with a wedge-like surface consist of very small crystal grains. It is interesting to note that texturization is obtained in this case at a film thickness less than 1 mu m. At a substrate temperature of 150 degrees C, texturization occurs and the resistivity obtained after hydrogen treatment is 6.9 x 10(-4) Omega cm. This result is very significant and it may accelerate the application of inexpensive AZO films in hydrogenated amorphous silicon solar cells.
引用
收藏
页码：1873 / 1877
页数：5
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