Improved terahertz wave intensity in photoconductive antennas formed of annealed low-temperature grown GaAs

被引：6
|
作者：
Kasai, Shintaro [1 ]
Watanabe, Masatoshi [1 ]
Ouchi, Toshihiko [1 ]
机构：
[1] Canon Inc, Canon Res Ctr, Ota Ku, Tokyo 1468501, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 7A期
关键词：
THz electromagnetic wave; LT-GaAs; annealing; photoconductive antenna; TEM;
D O I：
10.1143/JJAP.46.4163
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the dependence of terahertz (THz) wave intensity on ex situ annealing temperature of to W-temperature-grown Gallium arsenide (LT-GaAs). THz waves excited by femtosecond laser pulses were emitted from photoconductive antennas (bow-tie type) formed on LT-GaAs, and the radiation intensity was measured with a Si bolometer. LT-GaAs ex situ annealed at temperatures of 700 degrees C and above generated 1.4 times higher radiation intensity than unannealed LT-GaAs. Transmission electron microscopy images revealed apparently improved crystal quality, explaining the observed higher carrier mobility and associated radiation intensity.
引用
收藏
页码：4163 / 4165
页数：3
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