A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes

被引：46
|
作者：
Wang, Lai [1 ]
Jin, Jie [1 ]
Mi, Chenziyi [1 ]
Hao, Zhibiao [1 ]
Luo, Yi [1 ]
Sun, Changzheng [1 ]
Han, Yanjun [1 ]
Xiong, Bing [1 ]
Wang, Jian [1 ]
Li, Hongtao [1 ]
机构：
[1] Tsinghua Univ, Dept Elect Engn, Beijing 100084, Peoples R China
来源：
MATERIALS | 2017年 / 10卷 / 11期
基金：
国家重点研发计划;
关键词：
light-emitting diodes (LEDs); efficiency droop; GaN; InGaN; multiple quantum wells (MQWs); carrier lifetime; DIFFERENTIAL CARRIER LIFETIME; ELECTROLUMINESCENCE EFFICIENCY; RADIATIVE EFFICIENCIES; INJECTION; LAYERS; NM;
D O I：
10.3390/ma10111233
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Efficiency droop in GaN-based light emitting diodes (LEDs) under high injection current density perplexes the development of high-power solid-state lighting. Although the relevant study has lasted for about 10 years, its mechanism is still not thoroughly clear, and consequently its solution is also unsatisfactory up to now. Some emerging applications, e.g., high-speed visible light communication, requiring LED working under extremely high current density, makes the influence of efficiency droop become more serious. This paper reviews the experimental measurements on LED to explain the origins of droop in recent years, especially some new results reported after 2013. Particularly, the carrier lifetime of LED is analyzed intensively and its effects on LED droop behaviors are uncovered. Finally, possible solutions to overcome LED droop are discussed.
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收藏
页数：23
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