A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes

被引：0
|
作者：
K. Ding
Y. P. Zeng
X. C. Wei
Z. C. Li
J. X. Wang
H. X. Lu
P. P. Cong
X. Y. Yi
G. H. Wang
J. M. Li
机构：
[1] Chinese Academy of Sciences,Key Laboratory of Semiconductor Materials Science
[2] Chinese Academy of Sciences,Novel Material Center, Institute of Semiconductors
[3] Chinese Academy of Sciences,Research and Development Center for Semiconductor Lighting
来源：
Applied Physics B | 2009年 / 97卷
关键词：
85.60.Jb; 85.35.Be; 78.60.Fi;
D O I：
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学科分类号：
摘要：
The electroluminescence efficiency at room temperature and low temperature (15 K) in a wide-narrow-well InGaN/GaN light-emitting diode with a narrow last well (1.5 nm) and a narrow next-to-last barrier (5 nm) is investigated to study the efficiency droop phenomenon. A reduced droop in the wide wells and a reduced droop at low temperatures reveals that inferior hole transportation ability induced Auger recombination is the root for the droop at high excitation levels.
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页码：465 / 468
页数：3
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