Spin transport at interfaces with spin-orbit coupling: Formalism

被引:171
|
作者
Amin, V. P. [1 ,2 ]
Stiles, M. D. [2 ]
机构
[1] Univ Maryland, Maryland NanoCtr, College Pk, MD 20742 USA
[2] NIST, Ctr Nanoscale Sci & Technol, Gaithersburg, MD 20899 USA
关键词
POLARIZATION; ANISOTROPY; MAGNITUDE;
D O I
10.1103/PhysRevB.94.104419
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We generalize magnetoelectronic circuit theory to account for spin transfer to and from the atomic lattice via interfacial spin-orbit coupling. This enables a proper treatment of spin transport at interfaces between a ferromagnet and a heavy-metal nonmagnet. This generalized approach describes spin transport in terms of drops in spin and charge accumulations across the interface (as in the standard approach), but additionally includes the responses from in-plane electric fields and offsets in spin accumulations. A key finding is that in-plane electric fields give rise to spin accumulations and spin currents that can be polarized in any direction, generalizing the Rashba-Edelstein and spin Hall effects. The spin accumulations exert torques on the magnetization at the interface when they are misaligned from the magnetization. The additional out-of-plane spin currents exert torques via the spin-transfer mechanism on the ferromagnetic layer. To account for these phenomena we also describe spin torques within the generalized circuit theory. The additional effects included in this generalized circuit theory suggest modifications in the interpretations of experiments involving spin-orbit torques, spin pumping, spin memory loss, the Rashba-Edelstein effect, and the spin Hall magnetoresistance.
引用
收藏
页数:16
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