Frequency dispersion of capacitance-voltage characteristics in wide bandgap semiconductor-electrolyte junctions

被引：12

作者：

Frolov, D. S. ^{[1
]}

Zubkov, V. I. ^{[1
]}

机构：

[1] St Petersburg Electrotech Univ LETI, Dept Micro & Nanoelect, Prof Popov Str 5, St Petersburg 197376, Russia

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2016年 / 31卷 / 12期

关键词：

electrochemical capacitance-voltage profiling; ECV; wide bandgap semiconductors; impurity concentration; frequency dispersion of capacitance; DIAMOND;

D O I：

10.1088/0268-1242/31/12/125013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The frequency dispersion of capacitance-voltage characteristics and derived charge carrier concentration with application to the junction between an electrolyte and wide band-gap semiconductors are investigated. To expand the measurement frequency range, the precision LCR-meter Agilent E4980A was connected to the electrochemical cell ECVPro Nanometrics via a specially designed switch unit. The influence of series resistance and degree of dopant ionization on the frequency dispersion of CV-measured characteristics are discussed. It was shown that in wide band-gap semiconductors one can get both total and ionized dopant concentration, depending on the test frequency choice for capacitance measurements.

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页数：6

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