Room Temperature Bonding with Polymethylglutarimide Using the Surface Activated Bonding Method for a Layer Transfer Platform

被引：10

作者：

Matsumae, Takashi ^{[1
]}

Fujino, Masahisa ^{[1
]}

Suga, Tadatomo ^{[1
]}

机构：

[1] Univ Tokyo, Sch Engn, Dept Precis Engn, Tokyo, Japan

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2017年 / 6卷 / 08期

关键词：

SILICON-WAFERS; MICROFLUIDIC DEVICE; ATMOSPHERIC PLASMA; POLYMER SURFACES; GRAPHENE; ADHESION;

D O I：

10.1149/2.0111708jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Room temperature bonding of polymethylglutarimide (PMGI) was performed for a layer transfer process. The surface activated bonding (SAB) method was applied for bonding PMGI to a Si support wafer with a thin Si deposited layer at room temperature. Using SAB, a bonded area covering over 92% of the wafer surface with a room-temperature bond strength of similar to 2J/m(2) was achieved. The surface profile viewed using an atomic force microscope revealed that the PMGI surface was sufficiently smooth for bonding at room temperature. Micro-observation of the bond interface revealed that the deposited Si atoms did not diffuse into the PMGI. This process can thus be applied for three-dimensional integration and material integration. (C) The Author(s) 2017. Published by ECS.

引用

页码：P512 / P516

页数：5

共 50 条

[1] Room temperature bonding of polymethylglutarimide for layer transfer method
Matsumae, Takashi
Suga, Tadatomo
[J]. 2016 International Conference on Electronics Packaging (ICEP), 2016, : 310 - 313
[2] Room Temperature Bonding with Lift-Off Resist Using the Surface Activated Bonding Method for a Layer Transfer Platform
Matsumae, Takashi
Suga, Tadatomo
[J]. SEMICONDUCTOR WAFER BONDING: SCIENCE, TECHNOLOGY AND APPLICATIONS 14, 2016, 75 (09): : 197 - 202
[3] Room Temperature Wafer Bonding Using Surface Activated Bonding Method
Taniyama, Shingo
Wang, Ying-Hui
Fujino, Masahisa
Suga, Tadatomo
[J]. IEEE 9TH VLSI PACKAGING WORKSHOP IN JAPAN, 2008, : 141 - 144
[4] Room Temperature Bonding method for polymer films by Surface Activated Bonding method using Al intermediate layer
Matsumae, Takashi
Fujino, Masahisa
Suga, Tadatomo
[J]. 2014 INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING (ICEP), 2014, : 204 - 207
[5] Direct Bonding of PEN at Room Temperature by Means of Surface Activated Bonding method using Nano-adhesion Layer
Matsumae, Takashi
Fujino, Masahisa
Suga, Tadatomo
[J]. 2013 IEEE 3RD CPMT SYMPOSIUM JAPAN (ICSJ 2013), 2013,
[6] Room temperature Cu-Cu direct bonding using surface activated bonding method
Kim, TH
Howlader, MMR
Itoh, T
Suga, T
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (02): : 449 - 453
[7] Room Temperature Bonding of Polymer to Glass Wafer using Surface Activated Bonding (SAB) Method
Matsumae, T.
Nakano, M.
Matsumoto, Y.
Suga, T.
[J]. SEMICONDUCTOR WAFER BONDING 12: SCIENCE, TECHNOLOGY, AND APPLICATIONS, 2012, 50 (07): : 297 - 302
[8] Room temperature vacuum sealing using surface activated bonding method
Itoh, T
Okada, H
Takagi, H
Maeda, R
Suga, T
[J]. BOSTON TRANSDUCERS'03: DIGEST OF TECHNICAL PAPERS, VOLS 1 AND 2, 2003, : 1828 - 1831
[9] Room temperature GaN bonding by surface activated bonding methods
Mu, Fengwen
Suga, Tadatomo
[J]. 2018 19TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT), 2018, : 521 - 524
[10] UHV room temperature joining by the surface activated bonding method
Suga, T
[J]. INDUSTRIAL CERAMICS, 1999, 19 (03): : 176 - 178

← 1 2 3 4 5 →