Extended tuning of an injection-locked diode laser

被引：6
|
作者：
Shaffer, M. K. [1 ]
Ranjit, G. [1 ]
Sukenik, C. I. [1 ]
机构：
[1] Old Dominion Univ, Dept Phys, Norfolk, VA 23529 USA
来源：
REVIEW OF SCIENTIFIC INSTRUMENTS | 2008年 / 79卷 / 04期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2906224
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We have investigated the application of an electronic feedback technique recently reported by Repasky [Appl. Opt. 45, 9013 (2006)] to an injection-locked semiconductor diode laser. We find that without electronic feedback, the injection-locked slave laser will only follow the master for less than 1 GHz, but once the electronic feedback is applied, the slave laser is capable of following for more than 20 GHz, corresponding to the full scan range of the master laser. (C) 2008 American Institute of Physics.
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页数：3
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