SQUEEZING IN AN INJECTION-LOCKED SEMICONDUCTOR-LASER

被引：31

作者：

INOUE, S ^{[1
]}

MACHIDA, S ^{[1
]}

YAMAMOTO, Y ^{[1
]}

机构：

[1] WASEDA UNIV, DEPT APPL PHYS, SHINJUKU KU, TOKYO 169, JAPAN

来源：

PHYSICAL REVIEW A | 1993年 / 48卷 / 03期

关键词：

D O I：

10.1103/PhysRevA.48.2230

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The intensity-noise properties of an injection-locked semiconductor laser were studied experimentally. The constant-current-driven semiconductor laser producing the amplitude-squeezed state whose intensity noise was reduced below the standard quantum limit (SQL) by 0.72 dB was injection-locked by an external master laser. The measured intensity-noise level of the injection-locked semiconductor laser was 0.91 dB below the SQL. This experimental result indicates that a phase-coherent amplitude-squeezed state or squeezed vacuum state together with a reference local oscillator wave can be generated directly by semiconductor laser systems.

引用

页码：2230 / 2234

页数：5

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