BURTS NOISE IN AN INJECTION-LOCKED SEMICONDUCTOR-LASER

被引：2
|
作者：
DEDUSHENKO, KB
MAMAEV, AN
机构：
[1] Moscow Engineering Physical Institute, Moscow
来源：
OPTICS COMMUNICATIONS | 1993年 / 96卷 / 1-3期
关键词：
D O I：
10.1016/0030-4018(93)90527-C
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
An experimental study of low frequency noise in an injection-locked semiconductor laser is presented. The noise appears near the maximum of tuning characteristics due to switching between locked an unlocked states. The waveform of the output intensity is thus nearly rectangular. The noise spectrum at high frequencies decreases approximately as f-2. The noise may be classified as burst noise.
引用
收藏
页码：78 / 80
页数：3
相关论文
共 50 条
  • [1] SQUEEZING IN AN INJECTION-LOCKED SEMICONDUCTOR-LASER
    INOUE, S
    MACHIDA, S
    YAMAMOTO, Y
    PHYSICAL REVIEW A, 1993, 48 (03): : 2230 - 2234
  • [2] FM NOISE SUPPRESSION AND LINEWIDTH REDUCTION IN AN INJECTION-LOCKED SEMICONDUCTOR-LASER
    MOGENSEN, F
    OLESEN, H
    JACOBSEN, G
    ELECTRONICS LETTERS, 1985, 21 (16) : 696 - 697
  • [3] MODULATION PROPERTIES OF AN INJECTION-LOCKED SEMICONDUCTOR-LASER
    LIDOYNE, O
    GALLION, PB
    ERASME, D
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (03) : 344 - 351
  • [4] BISTABILITY AND CHAOS IN AN INJECTION-LOCKED SEMICONDUCTOR-LASER
    LEE, EK
    PANG, HS
    PARK, JD
    LEE, H
    PHYSICAL REVIEW A, 1993, 47 (01): : 736 - 739
  • [5] PHASE JITTER IN AN INJECTION-LOCKED SEMICONDUCTOR-LASER
    LIDOYNE, O
    GALLION, P
    DEBARGE, G
    OPTICS LETTERS, 1990, 15 (20) : 1144 - 1146
  • [6] EFFECTIVE BANDWIDTH FOR FM NOISE SUPPRESSION IN AN INJECTION-LOCKED SEMICONDUCTOR-LASER
    SAITO, S
    MOGENSEN, F
    OLESEN, H
    ELECTRONICS LETTERS, 1985, 21 (24) : 1173 - 1175
  • [7] LOCKING RANGE, PHASE NOISE AND POWER SPECTRUM OF AN INJECTION-LOCKED SEMICONDUCTOR-LASER
    LIDOYNE, O
    GALLION, P
    CHABRAN, C
    DEBARGE, G
    IEE PROCEEDINGS-J OPTOELECTRONICS, 1990, 137 (03): : 147 - 154
  • [8] CONTRIBUTION OF SPONTANEOUS EMISSION TO THE LINEWIDTH OF AN INJECTION-LOCKED SEMICONDUCTOR-LASER
    GALLION, P
    NAKAJIMA, H
    DEBARGE, G
    CHABRAN, C
    ELECTRONICS LETTERS, 1985, 21 (14) : 626 - 628
  • [9] ANALYSIS OF A HOMODYNE RECEIVER USING AN INJECTION-LOCKED SEMICONDUCTOR-LASER
    LIDOYNE, O
    GALLION, P
    ERASME, D
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 1991, 9 (05) : 659 - 665
  • [10] LOCKING BANDWIDTH AND RELAXATION OSCILLATIONS OF AN INJECTION-LOCKED SEMICONDUCTOR-LASER
    PETITBON, I
    GALLION, P
    DEBARGE, G
    CHABRAN, C
    ELECTRONICS LETTERS, 1986, 22 (17) : 889 - 890
12345