BURTS NOISE IN AN INJECTION-LOCKED SEMICONDUCTOR-LASER

被引：2
|
作者：
DEDUSHENKO, KB
MAMAEV, AN
机构：
[1] Moscow Engineering Physical Institute, Moscow
来源：
OPTICS COMMUNICATIONS | 1993年 / 96卷 / 1-3期
关键词：
D O I：
10.1016/0030-4018(93)90527-C
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
An experimental study of low frequency noise in an injection-locked semiconductor laser is presented. The noise appears near the maximum of tuning characteristics due to switching between locked an unlocked states. The waveform of the output intensity is thus nearly rectangular. The noise spectrum at high frequencies decreases approximately as f-2. The noise may be classified as burst noise.
引用
收藏
页码：78 / 80
页数：3
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