Bilayer Quantum Hall States in an n-Type Wide Tellurium Quantum Well

被引：9
|
作者：
Niu, Chang [1 ,2 ]
Qiu, Gang [1 ,2 ]
Wang, Yixiu [3 ]
Si, Mengwei [1 ,2 ]
Wu, Wenzhuo [3 ]
Ye, Peide D. [1 ,2 ]
机构：
[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
[3] Purdue Univ, Sch Ind Engn, W Lafayette, IN 47907 USA
来源：
NANO LETTERS | 2021年 / 21卷 / 18期
基金：
美国国家科学基金会;
关键词：
Tellurium; quantum Hall effect; bilayer system; Weyl Fermions; BAND STRUCTURE; PHASE;
D O I：
10.1021/acs.nanolett.1c01705
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Tellurium (Te) is a narrow bandgap semiconductor with a unique chiral crystal structure. The topological nature of electrons in the Te conduction band can be studied by realizing n-type doping using atomic layer deposition (ALD) technique on two-dimensional (2D) Te film. In this work, we fabricated and measured the double-gated n-type Te Hall-bar devices, which can operate as two separate or coupled electron layers controlled by the top gate and back gate. Profound Shubnikov-de Haas (SdH) oscillations are observed in both top and bottom electron layers. Landau level hybridization between two layers, compound and charge-transferable bilayer quantum Hall states at filling factor nu = 4, 6, and 8, are analyzed. Our work opens the door for the study of Weyl physics in coupled bilayer systems of 2D materials.
引用
收藏
页码：7527 / 7533
页数：7
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