Observation of a Fractional Quantum Hall State at ν=1/4 in a Wide GaAs Quantum Well

被引:59
|
作者
Luhman, D. R. [1 ]
Pan, W. [2 ]
Tsui, D. C. [1 ]
Pfeiffer, L. N. [3 ]
Baldwin, K. W. [3 ]
West, K. W. [3 ]
机构
[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
[2] Sandia Natl Labs, Albuquerque, NM 87195 USA
[3] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevLett.101.266804
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report the observation of an even-denominator fractional quantum Hall state at nu=1/4 in a high quality, wide GaAs quantum well. The sample has a quantum well width of 50 nm and an electron density of n(e)=2.55x10(11) cm(-2). We have performed transport measurements at T similar to 35 mK in magnetic fields up to 45 T. When the sample is perpendicular to the applied magnetic field, the diagonal resistance displays a kink at nu=1/4. Upon tilting the sample to an angle of theta=20.3 degrees a clear fractional quantum Hall state emerges at nu=1/4 with a plateau in the Hall resistance and a strong minimum in the diagonal resistance.
引用
收藏
页数:4
相关论文
共 50 条
  • [1] Fractional quantum Hall state at ν=1/4 in a wide quantum well
    Papic, Z.
    Moeller, G.
    Milovanovic, M. V.
    Regnault, N.
    Goerbig, M. O.
    [J]. PHYSICAL REVIEW B, 2009, 79 (24)
  • [2] Observation of fractional quantum Hall effect in an InAs quantum well
    Ma, Meng K.
    Hossain, Md. Shafayat
    Rosales, K. A. Villegas
    Deng, H.
    Tschirky, T.
    Wegscheider, W.
    Shayegan, M.
    [J]. PHYSICAL REVIEW B, 2017, 96 (24)
  • [3] Unconventional Fractional Quantum Hall States in a Wide Quantum Well
    S. I. Dorozhkin
    A. A. Kapustin
    I. B. Fedorov
    V. Umansky
    J. H. Smet
    [J]. JETP Letters, 2023, 117 : 68 - 74
  • [4] Unconventional Fractional Quantum Hall States in a Wide Quantum Well
    Dorozhkin, S. I.
    Kapustin, A. A.
    Fedorov, I. B.
    Umansky, V.
    Smet, J. H.
    [J]. JETP LETTERS, 2023, 117 (01) : 68 - 74
  • [5] THE OBSERVATION OF THE FRACTIONAL QUANTUM HALL-EFFECT IN A SINGLE (ALGA)AS/GAAS/(ALGA)AS QUANTUM-WELL
    WHITE, CRH
    DAVIES, M
    HENINI, M
    DAVIDSON, BR
    MAIN, PC
    OWERSBRADLEY, JR
    EAVES, L
    HUGHES, OH
    HEATH, M
    SKOLNICK, MS
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (07) : 792 - 794
  • [6] OBSERVATION OF THE FRACTIONAL QUANTUM HALL-EFFECT IN GAAS-(GA,AL)AS QUANTUM-WELL STRUCTURES
    BROWN, CV
    LANGERAK, CJGM
    MAIN, PC
    EAVES, L
    FOSTER, TJ
    HENINI, M
    TEUNISSEN, PAA
    PERENBOOM, JAAJ
    [J]. PHYSICA B, 1993, 184 (1-4): : 81 - 85
  • [7] ORIGIN OF THE V = 1/2 FRACTIONAL QUANTUM HALL STATE IN WIDE SINGLE QUANTUM-WELLS
    SUEN, YW
    MANOHARAN, HC
    YING, X
    SANTOS, MB
    SHAYEGAN, M
    [J]. PHYSICAL REVIEW LETTERS, 1994, 72 (21) : 3405 - 3408
  • [8] Fractional Quantum Hall States in a Ge Quantum Well
    Mironov, O. A.
    d'Ambrumenil, N.
    Dobbie, A.
    Leadley, D. R.
    Suslov, A. V.
    Green, E.
    [J]. PHYSICAL REVIEW LETTERS, 2016, 116 (17)
  • [9] Identification of topological order in the fractional quantum Hall state at ν=1/4
    Ma, Ken K. W.
    [J]. PHYSICAL REVIEW B, 2019, 100 (20)
  • [10] OBSERVATION POSSIBILITY OF 1/2 AND 1/4 FRACTIONAL RESONANCES IN THE HALL QUANTUM EFFECT
    IOGANSEN, LV
    [J]. PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1985, 11 (07): : 442 - 446