Electrical conductivity of Ag2S-Ga2S3-GeS2 glasses

被引：7
|
作者：
Chbani, N [1 ]
Ferhat, A [1 ]
Loireau-Lozac'h, AM [1 ]
Dugue, J [1 ]
机构：
[1] Univ Paris 05, Fac Sci Pharmaceut & Biol, Lab Chim Phys & Chim Minerale Struct, F-75270 Paris 06, France
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1998年 / 231卷 / 03期
关键词：
D O I：
10.1016/S0022-3093(98)00410-4
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The Ag2S-Ga2S3-GeS2 pseudo ternary system shows a large glass-forming region. Ternary glass formation does not reach the Ga2S3-Ag2S binary system. Electrical properties of the glasses were investigated by measuring complex impedance. For instance, at 298 K, for the xAg(2)S-Ga2S3-(9 - x)GeS2 compositions (x = 1-6) electrical conductivity and activation energy vary roughly between 10(-10) and 10(-5) S cm(-1), and 0.60 and 0.34 eV, respectively. Ionic transference number measurements and electronic transference number estimates indicate that these glasses are essentially ionic conductors. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：251 / 256
页数：6
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