New phase-change materials to achieve cognitive computing - Overview and future trends

被引：0

作者：

Rusu, M. I. ^{[1
]}

Miclos, S. ^{[1
]}

Savastru, D. ^{[1
]}

Popescu, M. ^{[2
]}

机构：

[1] INOE, Natl Inst R&D Optoelect, Bucharest 2000, Romania

[2] Natl Inst R&D Optoelect, Bucharest 2000, Romania

来源：

ICTON 2007: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, VOL 4 | 2007年

关键词：

chalcogenide; ovonic; Si-Ge-As-Te; amorphous phase transition;

D O I：

10.1109/ICTON.2007.4296401

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a basic new scientific and technological approach for information and computing use. We present the features that entitles Ovonic Phase Change Memory being a cognitive computer and the way that phase-change memory material can perform such neurosynaptic functions. Ovonic cognitive devices are capable of non-binary generation of information, storage, encryption, higher mathematics, and modular arithmetic and factoring.

引用

页码：287 / +

页数：2

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