New phase-change materials to achieve cognitive computing - Overview and future trends

被引：0
|
作者：
Rusu, M. I. [1 ]
Miclos, S. [1 ]
Savastru, D. [1 ]
Popescu, M. [2 ]
机构：
[1] INOE, Natl Inst R&D Optoelect, Bucharest 2000, Romania
[2] Natl Inst R&D Optoelect, Bucharest 2000, Romania
来源：
ICTON 2007: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, VOL 4 | 2007年
关键词：
chalcogenide; ovonic; Si-Ge-As-Te; amorphous phase transition;
D O I：
10.1109/ICTON.2007.4296401
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes a basic new scientific and technological approach for information and computing use. We present the features that entitles Ovonic Phase Change Memory being a cognitive computer and the way that phase-change memory material can perform such neurosynaptic functions. Ovonic cognitive devices are capable of non-binary generation of information, storage, encryption, higher mathematics, and modular arithmetic and factoring.
引用
收藏
页码：287 / +
页数：2
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