High electron mobility InAs0.8Sb0.2 grown on InP substrates by gas source molecular beam epitaxy

被引：2
|
作者：
Liao, Chichih [1 ]
Wu, Bing-Ruey [1 ]
Hsieh, K. C. [1 ]
Cheng, K. Y. [1 ]
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2008年 / 26卷 / 03期
关键词：
D O I：
10.1116/1.2884738
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-quality InAs(0.8)Sb(0.2) lattice matched to AlSb has been successfully grown on semi-insulating InP substrates by gas source molecular beam epitaxy using an AlSb/AlAs(0.5)Sb(0.5) buffer layer structure. Due to the inserted AlAs(0.5)Sb(0.5) layer between AlSb and InP, a two-dimensional growth mode is always maintained during the growth. Despite the large lattice mismatch between the InAs(0.8)Sb(0.2) epilayer and InP substrate, the room temperature electron mobility of a 2000 A thick InAs(0.8)Sb(0.2) has reached similar to 15 000 cm(2)/V s. Compared with InAs(0.8)Sb(0.2) grown on GaAs using a single AlSb buffer layer, this method requires a thinner (<= 1 mu m) buffer layer structure. (C) 2008 American Vacuum Society.
引用
收藏
页码：1078 / 1080
页数：3
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