TlGaP layers grown on GaAs substrates by gas source molecular beam epitaxy

被引：13

作者：

Fushida, M ^{[1
]}

Asahi, H ^{[1
]}

Yamamoto, K ^{[1
]}

Koh, H ^{[1
]}

Asami, K ^{[1
]}

Gonda, S ^{[1
]}

Oe, K ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, OPTOELECT LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 6A期

关键词：

TlGaP; new III-V semiconductor; temperature insensitivity; gas source MBE; phase separation; photoconductance;

D O I：

10.1143/JJAP.36.L665

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

TlGaP layers are grown on GaAs substrates by gas source molecular beam epitaxy. TlGaP is a constituent ternary alloy of the new III-V compound semiconductor TlInGaP, a material which can be used for 0.9 mu m to over 10 mu m laser diodes and for temperature-insensitive-wavelength laser diodes. TlGaP on GaAs shows phase separation into three stable compositions: TlGaP nearly lattice-matched to GaAs, GaP-like TlGaP and TlP-like TlGaP. By adjusting Tl and Ga fluxes: TlGaP layers without phase separation are grown. Photoconductance measurement on TlGaP shows absorption in the 1.3 mu m wavelength region as well as the small temperature variation of band-gap energy, as expected.

引用

页码：L665 / L667

页数：3

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