High electron mobility InAs0.8Sb0.2 grown on InP substrates by gas source molecular beam epitaxy

被引：2
|
作者：
Liao, Chichih [1 ]
Wu, Bing-Ruey [1 ]
Hsieh, K. C. [1 ]
Cheng, K. Y. [1 ]
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2008年 / 26卷 / 03期
关键词：
D O I：
10.1116/1.2884738
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-quality InAs(0.8)Sb(0.2) lattice matched to AlSb has been successfully grown on semi-insulating InP substrates by gas source molecular beam epitaxy using an AlSb/AlAs(0.5)Sb(0.5) buffer layer structure. Due to the inserted AlAs(0.5)Sb(0.5) layer between AlSb and InP, a two-dimensional growth mode is always maintained during the growth. Despite the large lattice mismatch between the InAs(0.8)Sb(0.2) epilayer and InP substrate, the room temperature electron mobility of a 2000 A thick InAs(0.8)Sb(0.2) has reached similar to 15 000 cm(2)/V s. Compared with InAs(0.8)Sb(0.2) grown on GaAs using a single AlSb buffer layer, this method requires a thinner (<= 1 mu m) buffer layer structure. (C) 2008 American Vacuum Society.
引用
收藏
页码：1078 / 1080
页数：3
相关论文
共 50 条
  • [1] Characteristics of InAS0.8Sb0.2 photodetectors on GaAs substrates
    Besikci, C
    Ozer, S
    Van Hoof, C
    Zimmermann, L
    John, J
    Merken, P
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (12) : 992 - 996
  • [2] High electron mobility InP grown by solid source molecular beam epitaxy
    Wang, Hongzhen
    Zhu, Yicheng
    Gu, Yi
    Chen, Pingping
    Wang, Wei
    Chen, Xiren
    Yang, Bo
    Li, Tao
    Shao, Xiumei
    Li, Xue
    Gong, Haimei
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2020, 112 (112)
  • [3] LONG WAVELENGTH INAS0.2SB0.8 DETECTORS GROWN ON PATTERNED SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    DOBBELAERE, W
    DEBOECK, J
    VANHOVE, M
    DENEFFE, K
    DERAEDT, W
    MERTENS, R
    BORGHS, G
    1989 INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 1989, : 717 - 720
  • [4] High-mobility two-dimensional electron gas in InAlAs/InAs heterostructures grown on virtual InAs substrates by molecular-beam epitaxy
    Lin, Y.
    Carlin, J. A.
    Arehart, A. R.
    Carlin, A. M.
    Ringel, S. A.
    APPLIED PHYSICS LETTERS, 2007, 90 (01)
  • [5] VERY HIGH ELECTRON-MOBILITY IN0.8GA0.2AS HETEROSTRUCTURE GROWN BY MOLECULAR-BEAM EPITAXY
    TACANO, M
    SUGIYAMA, Y
    TAKEUCHI, Y
    UENO, Y
    JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (12) : 1081 - 1085
  • [6] Optical investigation of InAs/InP(100) quantum dots grown by gas source molecular beam epitaxy
    Li, S. G.
    Gong, Q.
    Cao, C. F.
    Wang, X. Z.
    Yue, L.
    Liu, Q. B.
    Wang, H. L.
    Wang, Y.
    INFRARED PHYSICS & TECHNOLOGY, 2012, 55 (2-3) : 205 - 209
  • [7] InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates
    Khmissi, H.
    Naji, K.
    Alouane, M. H. Hadj
    Chauvin, N.
    Bru-Chevallier, C.
    Ilahi, B.
    Patriarche, G.
    Gendry, M.
    JOURNAL OF CRYSTAL GROWTH, 2012, 344 (01) : 45 - 50
  • [8] Magnetospectroscopy of high-purity InP grown by gas source molecular beam epitaxy
    Shi, XH
    Liu, PL
    Shi, GL
    Hu, CM
    Chen, ZH
    Shen, SC
    Chen, JX
    Xin, HP
    Li, AZ
    APPLIED PHYSICS LETTERS, 1998, 72 (12) : 1487 - 1488
  • [9] InAs nanowires on Si substrates grown by solid source molecular beam epitaxy
    Ihn, Soo-Ghang
    Song, Jong-In
    NANOTECHNOLOGY, 2007, 18 (35)
  • [10] Be redistribution in InGaAs and InP grown by gas source molecular beam epitaxy
    Mozume, T
    Hosomi, K
    JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 1223 - 1230
12345