Magnetospectroscopy of high-purity InP grown by gas source molecular beam epitaxy

被引:2
|
作者
Shi, XH
Liu, PL
Shi, GL
Hu, CM
Chen, ZH
Shen, SC
Chen, JX
Xin, HP
Li, AZ
机构
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Met, Natl Lab Funct Mat Informat, Shanghai 200050, Peoples R China
关键词
D O I
10.1063/1.120600
中图分类号
O59 [应用物理学];
学科分类号
摘要
Magneto-photoconductivity spectra related to the bound phonons and resonant polaron effect on Si donors in high-purity InP have been investigated. Not only the transition from the Is ground state to bound phonon state (1s+LO) of Si donors, but also the antilevel crossings of the (3, 1, 0) metastable state with the bound phonon states (1s+LO) and (2p(-1)+LO) are clearly observed in high magnetic fields. The results demonstrate the bound phonon in Si-doped InP consists of both electron and phonon via multiphonon processes and there is a resonant interaction between LO phonons and impurity-bound electrons in InP. (C) 1998 American Institute of Physics.
引用
收藏
页码:1487 / 1488
页数:2
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