Study of Thin Film LiNbO3 Laterally Excited Bulk Acoustic Resonators

被引：44

作者：

Yandrapalli, Soumya ^{[1
]}

Eroglu, Seniz Esra Kucuk ^{[1
]}

Plessky, Victor ^{[2
]}

Atakan, H. Baris ^{[1
,3
]}

Villanueva, Luis Guillermo ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne EPFL, Adv NEMS Lab, CH-1015 Lausanne, Switzerland

[2] Ecole Polytech Fed Lausanne EPFL, ANEMS Grp, CH-1015 Lausanne, Switzerland

[3] CSEM, CH-2002 Neuchatel, Switzerland

来源：

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS | 2022年 / 31卷 / 02期

关键词：

Lithium niobate; thin films; bulk acoustic resonator (BAW); A1; mode; shear wave; Lamb wave; 5; GHz; 5G application; large bandwidth; electromechanical coupling; k(t)(2); acoustic filters; microfabrication; RF MEMS; CUT LITHIUM-NIOBATE; FREQUENCY; TECHNOLOGY;

D O I：

10.1109/JMEMS.2022.3143354

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents an in-depth study of simulation and measurement results of laterally excited shear bulk acoustic resonators (XBAR) in Lithium Niobate, at 5 GHz with high electromechanical coupling factor (k(t)(2)) as high as 25%, and with impedances at resonance close to 2 Omega. Loaded Quality factors of up to 340 and 150 are obtained at resonance and anti-resonance, respectively. Experimental00 dispersion behaviors of main mode and spurious are presented. Several geometric parameters affecting resonator performance are studied in order to improve figure of merits (FoM) of the device for 5G filter applications. The modified fabrication process presented shows a high yield of over 90% of devices which can be scalable for mass production of high frequency, sub-6 GHz, wide band filters.

引用

页码：217 / 225

页数：9

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