Switched Mode Thin Film Bulk Acoustic Wave Resonators

被引：3
|
作者：
Koohi, Milad Zolfagharloo [1 ]
Mortazawi, Amir [1 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
来源：
2019 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2019年
基金：
美国国家科学基金会;
关键词：
5G; Barium strontium titanate (BST); FBAR; multi-mode; bulk acoustic wave (BAW) filters; ferroelectrics; reconfigurable systems; switchable; thin film bulk acoustic resonator;
D O I：
10.1109/mwsym.2019.8700959
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The development of wireless communication systems with more complexity, greater functionality, and multi-band operation imposes new challenges on the RF front end design. Ferroelectric barium strontium titanate (Ba(x)Sr(1-x)TiO3, BST) incorporated into a multi-layer structure, allows for the design of a new class of switched mode thin film bulk acoustic wave resonators. These devices can selectively resonate the different harmonics of the acoustic resonator. A switched mode dual resonance ferroelectric thin film bulk acoustic resonator (FBAR) is presented in this work. The device is capable of alternating between two modes of the resonant structure (at 2 GHz or 3.6 GHz) only by switching the polarity of the applied DC bias controlling voltage across the ferroelectric thin films.
引用
收藏
页码：528 / 531
页数：4
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