Thin film piezoelectric property considerations for surface acoustic wave and thin film bulk acoustic resonators

被引：21
|
作者：
Kirby, PB [1 ]
Potter, MDG [1 ]
Williams, CP [1 ]
Lim, MY [1 ]
机构：
[1] Cranfield Univ, Nanotechnol Grp, Cranfield MK43 0AL, Beds, England
来源：
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2003年 / 23卷 / 14期
关键词：
D O I：
10.1016/S0955-2219(03)00147-X
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report on the optimisation of thin film piezoelectric ZnO for production of resonant acoustic MEMS devices (SAW and FBAR/BAW). The ZnO was deposited by RF sputtering, and conditions were optimised to promote uniform polycrystalline orientation, high resistivity and smooth surface morphology. Both surface acoustic wave and thin film bulk acoustic resonators exhibited high Q values with low insertion loss (3-5 dB). (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码：2689 / 2692
页数：4
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