Low field mobility characteristics of sub-100 nm unstrained and strained Si MOSFETs

被引：0
|
作者：
Rim, K [1 ]
Narasimha, S [1 ]
Longstreet, M [1 ]
Mocuta, A [1 ]
Cai, J [1 ]
机构：
[1] IBM Corp, Thomas J Watson Res Ctr, Semicond Res & Dev Ctr, Yorktown Hts, NY 10598 USA
来源：
INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST | 2002年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A novel mobility extraction technique showed that the mobility enhancements in strained Si MOSFETs were retained in deep sub-100 nm channel lengths. Mobility measurement in devices with channel lengths down to 40 nm was demonstrated by a dR/dL extraction method. The results confirmed and quantified the mobility enhancements despite the presence of high halo doping in scaled strained Si MOSFETs.
引用
收藏
页码：43 / 46
页数：4
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